PART |
Description |
Maker |
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc]
|
MRF21060R3 MRF21060SR3 MRF21060 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) Motorola, Inc
|
MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
MRF19090 MRF19090S MRF19090SR3 |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
APTGT50A60T1G |
Phase leg Trench Field Stop IGBT? Power Module Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
APTGT75A60T1G |
Phase leg Trench Field Stop IGBT? Power Module Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
APTGT150DA60T1G |
Boost chopper Trench Field Stop IGBT? Power Module Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
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